in this paper, we examine the effect of the energy difference between the l- and the -valleys in compound semiconductor materials, carrier effective mass, and the scattering processes on the electron transport characteristics in mesfets. to do this, we use the monte carlo simulation to demonstrate the superiority of the ingaas mesfet, made on a semi-insulating inp substrate, over both inp and ...

Hydrogen can be inadvertently introduced at any of several steps in the fabrication of optoelectronic devices. The most common consequence of hydrogenation is the passivation of dopant impurities, which leads to a decrease in the electrical conductivity of the material. The most successfully applied experimental technique for directly determining the involvement of hydrogen has been infrared-ab...

Many different compound semiconductors can be formed by changing the combination of constituent elements. Properties of alloy semiconductors composed of a plurality of compound semiconductors can be changed in a continuous fashion by changing the composition ratio. A very thin alloy semiconductor multilayer showing interesting properties can be formed by sophisticated epitaxial growth methods s...